GaAs Substrate
Ibisobanuro
Gallium Arsenide (GaAs) nitsinda ryingenzi kandi rikuze III-Ⅴ compound semiconductor, rikoreshwa cyane mubijyanye na optoelectronics na microelectronics.GaAs igabanijwemo ibyiciro bibiri: igice cya kabiri gikingira GaAs na N ubwoko bwa GaAs.Igice cya kabiri gikingira GaAs gikoreshwa cyane cyane mugukora imiyoboro ihuriweho na MESFET, HEMT na HBT, zikoreshwa mumatumanaho ya radar, microwave na milimetero, itumanaho ryihuta cyane hamwe na fibre optique.Ubwoko bwa N-bwoko bwa GaAs bukoreshwa cyane cyane muri LD, LED, hafi ya lazeri ya infragre, kwant kwiza kwamashanyarazi menshi hamwe ningirabuzimafatizo zikoresha izuba ryinshi.
Ibyiza
| Crystal | Yandukuwe | Ubwoko bw'imyitwarire | Kwishyira hamwe gutemba cm-3 | Ubucucike bwa cm-2 | Uburyo bwo Gukura |
| GaAs | Nta na kimwe | Si | / | <5 × 105 | LEC |
| Si | N | > 5 × 1017 | |||
| Cr | Si | / | |||
| Fe | N | ~ 2 × 1018 | |||
| Zn | P | > 5 × 1017 |
Ibisobanuro bya GaAs
Inzira ya GaAs yerekeza kuri substrate ikozwe muri gallium arsenide (GaAs) ibikoresho bya kristu.GaAs nigice cya semiconductor igizwe na gallium (Ga) nibintu bya arsenic (As).
GaAs substrates ikoreshwa kenshi mubijyanye na electronics na optoelectronics kubera ibyiza byayo.Bimwe mubintu byingenzi byingenzi bya GaAs birimo:
1. Umuvuduko mwinshi wa elegitoronike: GaAs ifite moteri ya elegitoronike kurusha ibindi bikoresho bisanzwe bya semiconductor nka silicon (Si).Ibi biranga bituma GaAs substrate ikwiranye nibikoresho byinshi bya elegitoroniki bifite ingufu nyinshi.
2. Icyuho cya bande itaziguye: GaAs ifite icyuho cya bande itaziguye, bivuze ko kohereza urumuri neza bishobora kubaho mugihe electroni nu mwobo byongeye.Ibi biranga bituma GaAs substrates nziza kubikorwa bya optoelectronic nka diode itanga urumuri (LEDs) na laseri.
3. Umuyoboro mugari: GaAs ifite umurongo mugari kuruta silikoni, ituma ikora ku bushyuhe bwinshi.Uyu mutungo utuma ibikoresho bishingiye kuri GaAs bikora neza mubushyuhe bwo hejuru.
4. Urusaku ruto: GaAs substrates yerekana urusaku ruke, bigatuma ikwirakwiza amajwi make hamwe nibindi bikoresho bya elegitoroniki byoroshye.
Ibikoresho bya GaAs bikoreshwa cyane mubikoresho bya elegitoroniki na optoelectronic, harimo transistor yihuta cyane, microwave ihuza imiyoboro (IC), selile yifotora, ibyuma bifotora, hamwe nizuba.
Izi substrate zirashobora gutegurwa hifashishijwe tekinike zitandukanye nka Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE) cyangwa Liquid Phase Epitaxy (LPE).Uburyo bwihariye bwo gukura bukoreshwa biterwa nubushake bwifuzwa hamwe nubuziranenge bwibisabwa bya GaAs.
