LiAlO2 Substrate
Ibisobanuro
LiAlO2 ni firime nziza ya kristu substrate.
Ibyiza
Imiterere ya Crystal | M4 |
Igice cya selile gihoraho | a = 5.17 A c = 6.26 A. |
Gushonga ingingo (℃) | 1900 |
Ubucucike (g / cm3) | 2.6 |
Gukomera (Mho) | 7.5 |
Kuringaniza | Ingaragu cyangwa ebyiri cyangwa hanze |
Icyerekezo cya Crystal | <100> <001> |
Ibisobanuro bya LiAlO2
LiAlO2 substrate bivuga substrate ikozwe muri lithium aluminium oxyde (LiAlO2).LiAlO2 nuruvange rwa kristalline iri mumatsinda yumwanya R3m kandi ifite imiterere ya mpandeshatu.
LiAlO2 substrates yakoreshejwe muburyo butandukanye, harimo gukura kwa firime yoroheje, ibice bya epitaxial, hamwe na heterostructures kubikoresho bya elegitoroniki, optoelectronic, na fotonike.Bitewe nubwiza buhebuje bwumubiri nubumashini, birakwiriye cyane cyane mugutezimbere ibikoresho bigari bya semiconductor.
Imwe mumikorere nyamukuru ya LiAlO2 substrates ni murwego rwa Gallium Nitride (GaN) ibikoresho bishingiye kuri High Electron Mobility Transistors (HEMTs) na Light Emitting Diode (LEDs).Kudahuza lattice hagati ya LiAlO2 na GaN ni bito, bituma iba substrate ikwiranye no gukura kwa epitaxial ya firime ya GaN yoroheje.LiAlO2 substrate itanga icyitegererezo cyiza cyo kubika GaN, bigatuma imikorere yibikoresho byizewe.
LiAlO2 substrates nayo ikoreshwa mubindi bice nko gukura kw'ibikoresho bya ferroelektrike kubikoresho byo kwibuka, guteza imbere ibikoresho bya piezoelectric, no guhimba bateri zikomeye.Imiterere yihariye yabo, nkubushyuhe bwo hejuru bwumuriro, imashini nziza ihagaze neza, hamwe na dielectric ihoraho, ibaha inyungu muribi bikorwa.
Muri make, LiAlO2 substrate bivuga substrate ikozwe muri lithium aluminium oxyde.LiAlO2 substrates ikoreshwa mubikorwa bitandukanye, cyane cyane mukuzamura ibikoresho bishingiye kuri GaN, no guteza imbere ibindi bikoresho bya elegitoroniki, optoelectronic na Photonic.Bafite ibyifuzwa bifatika byumubiri nubumashini bituma biberanye no gushira firime zoroheje hamwe na heterostructures no kuzamura imikorere yibikoresho.