SiC Substrate
Ibisobanuro
Silicon karbide (SiC) ni ikomatanyirizo ryitsinda rya IV-IV, niryo ryonyine rihamye rikomeye mu itsinda rya IV ryimbonerahamwe yigihe, Ni igice cya kabiri cyingirakamaro.SiC ifite ibikoresho byiza cyane byubushyuhe, ubukanishi, imiti n’amashanyarazi, bigatuma iba kimwe mu bikoresho byiza byo gukora ubushyuhe bwo hejuru, inshuro nyinshi, n’ibikoresho bya elegitoroniki bikomeye, SiC nayo irashobora gukoreshwa nkibikoresho byubutaka kuri GaN ishingiye kubururu butanga urumuri.Kugeza ubu, 4H-SiC ni ibicuruzwa nyamukuru ku isoko, kandi ubwoko bwikwirakwizwa bugabanijwemo ubwoko bwa insuline na N ubwoko.
Ibyiza
| Ingingo | 2 cm 4H N-ubwoko | ||
| Diameter | 2inch (50.8mm) | ||
| Umubyimba | 350 +/- 25um | ||
| Icyerekezo | hanze ya axis 4.0˚ yerekeza kuri <1120> ± 0.5˚ | ||
| Icyerekezo Cyibanze | <1-100> ± 5 ° | ||
| Icyiciro cya kabiri Icyerekezo | 90.0˚ CW kuva muri Flat primaire ± 5.0˚, Si Isura hejuru | ||
| Uburebure bwibanze | 16 ± 2.0 | ||
| Uburebure bwa kabiri | 8 ± 2.0 | ||
| Icyiciro | Urwego rw'umusaruro (P) | Icyiciro cy'ubushakashatsi (R) | Icyiciro cya Dummy (D) |
| Kurwanya | 0.015 ~ 0.028 Ω · cm | <0.1 Ω · cm | <0.1 Ω · cm |
| Ubucucike bwa Micropipe | Mic 1 micropipes / cm² | ≤ 1 0micropipes / cm² | Mic 30 micropipes / cm² |
| Ubuso | Si isura CMP Ra <0.5nm, C Isura Ra <1 nm | N / A, agace gakoreshwa> 75% | |
| TTV | <8 um | <10um | <15 um |
| Umuheto | <± 8 um | <± 10um | <± 15um |
| Intambara | <15 um | <20 um | <25 um |
| Ibice | Nta na kimwe | Uburebure bwa mm 3 mm | Uburebure bwuzuye ≤10mm, |
| Igishushanyo | ≤ 3 gushushanya, guhuriza hamwe | ≤ 5 gushushanya, guhuriza hamwe | ≤ 10 gushushanya, guhuriza hamwe |
| Isahani | ntarengwa amasahani 6, | ntarengwa amasahani 12, | N / A, agace gakoreshwa> 75% |
| Uturere twa polytype | Nta na kimwe | Agace kegeranye ≤ 5% | Agace kegeranye ≤ 10% |
| Kwanduza | Nta na kimwe | ||
